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Surface Physics Laboratory, Fudan University | 論文
- Near Band-Edge Photoluminescence in Strained and Relaxed Si_Ge_x/Si Quantum Wells
- Oxygen δ-Doped Si Multi-Layers Grown by Molecular Beam Epitaxy
- Crystalline Si/SiO_x Multilayer Structure Grown by Molecular Beam Epitaxy
- Characterization of Silicon Nitride Thin Films on Si and Overlayer Growth of Si and Ge
- Raman Scattering Characterization of the Crystalline Qualities of ZnSe Films Grown on S-Passivated GaAs(100) Substrates
- Light-Emitting Porous Silicon Prepared by Pulsed Anodic Etching