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Sony Corporation Semiconductor Solutions Network Company | 論文

• 94-GHz f_T, 0.4-dB NF_ HBT with Optimized Si Cap and Extrinsic Base Using Blanket SiGeC Epitaxy
• 94-GHz f_T, 0.4-dB NF_ HBT with Optimized Si-cap and Extrinsic Base using Blanket SiGeC Epitaxy for Consumer Wireless Applications
• 94-GHz $f_{T}$, 0.4-dB $\mathit{NF}_{\text{min}}$ HBT with Optimized Si Cap and Extrinsic Base Using Blanket SiGeC Epitaxy

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