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Research Laboratory, DENSO CORPORATION | 論文

• Effect of Hydrogenation on the Dangling-Bond Free 4H-SiC(1120)/SiO_2 Interface Studied by Ab Initio Calculations
• First Principles Theoretical Study of 4H-SiC/SiO_2 Interfacial Electronic States on (0001), (0001), and (1120)

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