スポンサーリンク

Research Center for Nano-Device and System, Nagoya Institute of Technolgy, Nagoya 466-8555, Japan | 論文

• Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors

スポンサーリンク