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Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University | 論文
- Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates
- Control of Dot Size and Tunneling Barrier Profile in In_Ga_As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates
- Structural and Optical Properties of InGaAs Ridge Quantum Wire Arrays with Sub-micron Pitches Grown by Selective MBE on InP Substrates
- Structural and Optical Properties of 10nm-Class InGaAs Ridge Quantum Wire Arrays with Sub-Micron Pitches Grown by Selective MBE on Patterned InP Substrate
- Characterization and Optimization of Atomic Hydrogen Cleaning of InP Surface for Selective Molecular Beam Epitaxial Growth of InGaAs Quantum Structure Arrays
- Ridge Uniformity Improvement Toward Growth of Sub-10nm InGaAs Ridge Quantum Wires by Selective MBE on Patterned InP Substrate
- Fabrication of AlGaN/GaN Quantum Nanostructures by Methane-Based Dry Etching and Characterization of Their Electrical Properties
- Improvement of Growth Process to Achieve High Geometrical Uniformity in InGaAs Ridge Quantum Wires Grown by Selective MBE on Patterned InP Substrate