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Process Team, Hyundai MicroElectronics Co., Ltd. | 論文
- Effect of Wet Etched Thickness and Reoxidation on Reliability of Dual Gate Oxide for Sub-Quarter Micron Complementary Metal-Oxide-Semiconductor Devices
- Improvement of Gate Oxide Reliability for Direct Tungsten-Gate Using Denudation of WN_x
- Reduction of junction leakage current and sheet resistance using C-49 TiSi_2 as a diffusion source
- Reduction of junction leakage current and sheet resistance using C-49 TiSi_2 as a diffusion source