スポンサーリンク
Process Research Center, Corporate Manufacturing Engineering Center, Toshiba Corporation, 33 Shin-isogo-cho, Isogo-ku, Yokohama 235-0017, Japan | 論文
- Structural Changes in a Resist Resulting from Plasma Exposure during the Reactive Ion Etching Process
- Evaluation of Gate Oxide Damage Caused by Ionization Magnetron Sputtering