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Otto-von-guericke Universitat-magdeburg Institut Fur Experimentelle Physik Fakultat Fur Naturwissens | 論文
- Crack-Free, Highly Conducting GaN Layers on Si Substrates by Ge Doping
- Atomic Arrangement at the AlN/Si(110) Interface
- Metal Organic Vapor Phase Epitaxy of ZnO on GaN/Si(111) Using Tertiary-Butanol as O-Precursor