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Optoelectronics Technology Research Laboratory:(present Address) Semiconductor Technology Laboratori | 論文
- Effects of GaAs-Surface Roughness on the Electron-Beam Patterning Characteristics of a Surface-Oxide Layer
- In Situ Fabrication of Buried GaAs/AlGaAs Quantum-Well Mesa-Stripe Structures with Improved Regrown Interfaces
- In situ Electron-beam Processing for GaAs/AlGaAs Nano-structures
- Improvement in Patterning Characteristics of GaAs Oxide Mask Used in In Situ Electron-Beam Lithography
- In Situ GaAs Patterning and Subsequent Molecular-Beam Epitaxial Regrowth of AlGaAs/GaAs Wire Structures
- Electron Beam Patterning Mechanism of GaAs Oxide Mask Layers Used in In Situ Electron Beam Lithography
- Cathodoluminescence of Wirelike GaAs/AlAs Quantum Well Structures Grown on Substrates Patterned with [001] Mesa Stripes
- Characterization of In Situ Cl_2-Etched GaAs Buffer Layers and Regrown GaAs/AlGaAs Quantum Welts
- Photoluminescence of the SrS:Mn^Phosphor and Pb^-Sensitized Luminescence of the SrS:Pb^,Mn^Phosphor