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Optoelectronics Joint Research Laboratory (OJRL) | 論文
- Lateral Spreads of Be and Si in GaAs Implanted with a Maskless Ion Implantation System
- A 100 kV Maskless Ion-Implantation System with an Au-Si-Be Liquid Metal Ion Source for III-V Compound Semiconductors
- Au-Si-Be Liquid Metal Ion Source for Maskless Ion Implantation