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Ntt Photonics Laboratories | 論文
- Optical Characteristics and Reliability of Plastic Ferrules for MU-Type Simplified Receptacles(Connector and Sliding Contacts)(IS-EMD2003 : Recent Technical Trend of Electro-Mechanical Devices)
- Long-Term Reliability of Plastic Ferrules for Single-Mode Fiber-Optic Connectors
- Optical Label Switching Using Optical Label Based on Wavelength and Pilot Tone Frequency (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Optical Label Switching Using Optical Label Based on Wavelength and Pilot Tone Frequency (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
- Over-10-dBm output uni-traveling-carrier photodiode module integrating a power amplifier for wireless transmissions in the 125-GHz band
- Wide passband tandem MZI-synchronized AWG employing mode converter and multimode waveguide
- 1 Tbit/s (25 × 43 Gbit/s) Field Trial Using 43-Gbit/s/ch OTN Interface Prototype(Special Issue on 40 Gbit/s Optical Transmission Technologies)
- Dispersion Tolerant 80- Gbit /s Carrier-Suppressed Return-to-Zero (CS-RZ) Format Generated by Using Phase- and Duty-Controlled Optical Time Division Multiplexing (OTDM) Technique
- Carrier-Suppressed Return-to- Zero Pulse Generation Using Mode-Locked Lasers for 40-Gbit/s Transmission(Special Issue on 40 Gbit/s Optical Transmission Technologies)
- High Purity Liquid Phase Epitaxial Growth of InP
- Ultrahigh Purity Liquid Phase Epitaxial Growth of GaAs
- Effective Techniques for Ultra-High Purity Liquid Phase Epitaxial Growth of Ga_In_As
- High-Purity LPE Growth of InP by Co Addition to an In-P Melt
- Growth of InP and InGaAs by MO-Chloride VPE
- Study of a PMD Tolerance Extension by InP HBT Analog EDC IC without Adaptive Control in 43G DQPSK Transmission
- Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission
- Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission
- Formation of p^+-layer in GaAs by dual implantation of Zn and As
- Redistrubution of Zn Implanted into GaAs