スポンサーリンク
National Institute of Advanced Industrial Science and Technology, 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan | 論文
- Ferroelectric Property of Alkoxy-Derived YMnO3 Films Crystallized in Argon
- Preparation of (Y,Yb)MnO3/Y2O3/Si (MFIS) Structure by Chemical Solution Deposition Method
- Thickness Dependence of Electrical Properties of Highly (100)-Oriented BaTiO3 Thin Films Prepared by One-Step Chemical Solution Deposition