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Nagoya Inst. Technol. Nagoya Jpn | 論文
- Morphological Control of Ion-Induced Carbon Nanofibers and Their Field Emission Properties
- Low-Temperature Fabrication of Ion-Induced Ge Nanostructures : Effect of Simultaneous Al Supply
- Chemical Characterization of Dextrins Obtained from Potato Starch by Treatment with Bacillus macerans Enzyme
- The Structure of High Molecular Weight Dextrins Obtained from Potato Starch by Treatment with Bacillus macerans Enzyme
- 4α/β-(L/D-Phenylalanylamino)proline Residue-Containing Gramicidin S Analogs with High Antibacterial Activity against Gram-Positive and Negative Bacteria and Low Hemolytic Activity
- High Field Magnetooptics of a Diluted Magnetic Semiconductor Cd_Co_xSe
- Far-Infrared Electron Spin Resonance of Cd_Co_xM (M=Te and Se) in High Magnetic Fields
- Geometrical Quadrupolar Frustration in DyB_4(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Dilatometric Measurements and Multipole Ordering in DyB_2C_2 and HoB_2C_2(Condensed Matter : Structure, Mechanical and Thermal Properties)
- Elastic Constant in Magnetic Fields and Singlet-Triplet State of Heavy Fermion Superconductor PrOs_4Sb_(Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- Ultrasonic Investigation of Metamagnetic Transition in CeRu2Si2 (Proceedings of the International Conference on Strongly Correlated Electrons with Orbital Degrees of Freedom(ORBITAL2001))
- 28a-ZB-7 線幅に依存しない量子ホール効果のブレークダウン現象
- 24pL-4 斜め磁場でのWeiss振動
- 26aC-7 逆HEMT2次元電子系におけるフォーカス効果と平行磁場
- 29a-ZB-2 平行磁場下の磁気電子フォーカス効果で見たフェルミ面の異方性
- GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
- Preparation and Properties of Bridged Gramicidin S Analogs Possessing Various Intra- or Intermolecular Linkers between Basic Side Chains
- Vortex Flows in Two Dimensions : The Origin of Hydrodynamic Tail(The 50th Anniversary of the Alder Transition -Recent Progress on Computational Statistical Physics-)
- Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
- Band Gap Energy and Stress of GaAs Grown on Si by MOCVD