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Millimeter-wave Innovation Technology Research Center (mint) Dongguk University | 論文
- Simulation of sub-0.1μm T-gate Trilayer Process in HEMTs for Millimeter-wave Frequencies Using 50-kV and 100-kV Electron Beam Lithography System (AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
- Simulation of sub-0.1 μm T-gate Trilayer Process in HEMTs for Millimeter-wave Frequencies Using 50-kV and 100-kV Electron Beam Lithography System (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- Design and Fabrication of Planar GaAs Gunn Diodes
- Effects of Methoxsalen from Poncirus trifoliata on Acetylcholinesterase and Trimethyltin-Induced Learning and Memory Impairment
- Electrical Characteristics of the 0.1 μm Gate Length Pseudomorphic High-Electron-Mobility Transistors with Low-Dielectric-Constant Benzo-Cyclo-Butene Passivations
- Radio Frequency Characteristics of Multifinger 0.1 μm Metamorphic High-Electron-Mobility Transistors Depending on Number of Gate Fingers and Gate Width
- The Fabrication of the Low Loss Transmission Line and Low Pass Filter using Surface Microelectromechanical Systems Technology
- Small-Signal Analysis of High Maximum Frequency of Oscillation 0.1-μm Off-Set Gamma-Shaped Gate InGaAs/InAlAs/GaAs Metamorphic High-Electron-Mobility Transistors
- Millimeter-Wave GaAs Surface Micromachined Bandpass Filters Using the External Quality Factor