スポンサーリンク

Microelectronics and Information Systems Research Center, National Chiao Tung University | 論文

• Quantum Mechanical Corrected Simulation Program with Integrated Circuit Emphasis Model for Simulation of Ultrathin Oxide Metal-Oxide-Semiconductor Field Effect Transistor Gate Tunneling Current
• Growth of ZnSe Epilayer on Si Using Ge/Ge_xSi_ Buffer Structure
• Comparison of Random Dopant-Induced Threshold Voltage Fluctuations in Nanoscale Single-, Double-, and Surrounding-Gate Field Effect Transistors
• Controlled Placement of Self-Organized Ge Dots on Patterned Si(001) Surfaces
• Flower-Like Distribued Self-Oranized Ge Dots on Patterned Si (001) Substrates
• Quantum Mechanical Corrected Simulation Program with Integrated Circuit Emphasis Model for Simulation of Ultrathin Oxide Metal-Oxide-Semiconductor Field Effect Transistor Gate Tunneling Current

スポンサーリンク