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Micro And Nanotechnology Laboratory And Department Of Electrical Computer Engineering University Of | 論文
- Enhancement-Mode High Electron Mobility Transistors Lattice-Matched to InP Substrates Utilizing Ti/Pt/Au Gate Metallization
- Micro-Racetrack Notch Filters Based on InGaAsP/InP High Mesa Optical Waveguides
- High-Power-Density 0.25 μm Gate-Length AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating 6H–SiC Substrates