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Lsi Division Ii Toshiba Corporation | 論文
- Design Methodology of Deep Submicron CMOS Devices for 1 V Operation (Special Issue on Low-Power LSI Technologies)
- High-Density Full-CMOS SRAM Cell Technology with a Deep Sub-Micron Spacing between nMOS and pMOSFET (Special Section on High Speed and High Density Multi Functional LSI Memories)