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Ldi Process Architecture Lsi Development Team System-lsi Division Semiconductor Business Samsung Ele | 論文
- Process Design for Preventing the Gate Oxide Thinning in the Integration of Dual Gate Oxide Transistor
- New STI Scheme to Compensate Gate Oxide Thinning at STI Corner Edge for the Devices Using Thick Dual Gate Oxide
- Production-Worthy Full Process Integration of Ta_2O_5 Capacitor Technology
- Production-Worthy Full Process Integration of Ta_2O_5 Capacitor Technology
- Production-Worthy Full Process Integration of Ta_2O_5 Capacitor Technology