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Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University | 論文
- Ultrashallow Junction Formation Using Low-Temperature Selective Si_Ge_x Chemical Vapor Deposition
- Fabrication of a Si_Ge_x Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition