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Kanazawa Inst. Technology Ishikawa Jpn | 論文
- Role of Carbon and Hydrogen in Reactive Ion Etching of InP by Gas Mixture of Ethane and Hydrogen
- Open-Tube Zn Diffusion Method for InGaAsP/InP Heterojunction Bipolar Transistors
- Fe and Al Concentrations in High Resistivity InP Layer Grown by Low-Temperature Liquid Phase Epitaxy