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Interdisciplinary GT-aduate School of Engineering Sciences, Kyushu University | 論文
- Optimum Discharge Condition of DC Bias Electron Cyclotron Resonance Plasma Sputtering for High Quality Si Epitaxial Growth
- Effect of Substrate Bias on Si Epitaxial Growth Using Sputtering-Type Electron Cyclotron Resonance (ECR) Plasma
- Room Temperature Deposition of Silicon Nitride Films for Passivation of Organic Electroluminescence Device Using a Sputtering-Type Electron Cyclotron Resonance Plasma
- Growth of Epitaxial Silicon Film at Low Temperature by Using Sputtering-Type Electron Cyclotron Resonance Plasma