スポンサーリンク
Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan | 論文
- GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Tetraethylorthosilicate SiO2 Gate Insulator on AlGaN/GaN Heterostructure
- Wireless Inter-Chip Signal Transmission by Electromagnetic Coupling of Open-Ring Resonators