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Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. | 論文

• Characterization of Hf1-xZrxO2 Gate Dielectrics with 0\leq x\leq 1 Prepared by Atomic Layer Deposition for Metal Oxide Semiconductor Field Effect Transistor Applications

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