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Institute of Materials Science University of Tsukuba | 論文
- 21aTH-7 希薄磁性半導体におけるメタ磁性
- 31pYH-8 キャリア誘起強磁性のキュリー温度の限界
- III-V族半導体中に形成された磁気的不純物バンド
- 希薄磁性半導体におけるキャリア状態と強磁性発現機構
- 希薄磁性半導体の状態密度、光学吸収端およびバンド端の磁性イオンモル濃度依存性
- Dynamical coherent potential approach for the s-f model in antiferromagnetic semiconductors
- 17aYH-1 磁気的不純物バンドの形成と強磁性の出現
- Exchange-Induced Band Splitting in Diluted Magnetic Semiconductors under a Weak Magnetic Field
- 28aTB-10 希薄磁性半導体におけるp-d交換相互作用の多重散乱の効果
- Quasiparticle Band of Antiferromagnetic Semiconductors -Single-Site Approximation for the s-f Model-
- Current vs Voltage Characteristics of Al-Al_2O_3-Pd Tunnel Junction Hydrogen Sensor
- [Fe(Ni)/Cu]多層膜の膜構造と磁気抵抗効果 (多層膜・人工格子・グラニューラー)
- [Fe(Ni)/Cu]多層膜の膜構造と磁気抵抗効果
- Structural Analysis of C_ Nanotubes Heat-Treated in Vacuum
- Universal Scaling in the Dynamical Conductivity of Heavy Fermion Ce and Yb Compounds(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Pseudogap Formation and Heavy-Carrier Dynamics in Intermediate-Valence YbAl_3(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- The Nature of Reversible Change in M_S Temperatures of Ti-Ni Alloys with Alternating Aging
- Elastic Constants of Ti-48 at%Ni-2 at%Fe Single Crystal Prior to B2→R Transformation
- Phase Transformation and Crystal Structures of Ti_2Ni_3 precipitates in Ti-Ni Alloys
- Fabrication of Schottky Junction Between Au and SrTiO_3