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Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Poland | 論文
- Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates
- Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates (Special Issue : Recent Advances in Nitride Semiconductors)