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Institute of Electronic, Microelectronic and Nanotechnology | 論文

• Above 600mS/mm Transconductance with 2.3A/mm Drain Current Density AlN/GaN High-Electron-Mobility Transistors Grown on Silicon
• Trapping Effects Dependence on Electron Confinement in Ultrashort GaN-on-Si High-Electron-Mobility Transistors
• Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices

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