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Institute for Materials Research (IMR) Tohoku University | 論文
- 22aXF-10 単層カーボンナノチューブの磁性分子吸着特性
- 21aXF-4 TEM-EELS による二層カーボンナノチューブの電子構造の研究 II
- 三重県で初めてのリフレッシュ理科教室
- 30pZB-5 TEM-EELS による二層カーボンナノチューブの電子構造の研究
- 7p-PSA-18 CaNiNの低温粉末中性子回折
- Interplay of Excitonic Radiative Recombination and Ionization in Photocurrent Spectra of Thick Barrier GaAs/AlAs Multiple Quantum Wells
- Atomistic Crystal Growth Process of Metal Oxide Electronics Materials : Theoretical Simulation Studies
- NMR Study of Bismuth-Substituted Yttrium Iron Garnets
- Remote Estimation of the Chlorophyll Concentration of Living Trees Using Laser-induced Fluorescence Imaging Lidar
- Design and Performance of Water-Cooled Magnets(Part I. Establishment and Tests of Hybrid Magnet System at HFLSM)
- Design and Performance of Superconducting Magnets for Hybrid Magnets(Part I. Establishment and Tests of Hybrid Magnet System at HFLSM)
- Site-Dependent ^O Substitution in YBa_2Cu_3O_7 Studied by Raman Scattering Measurements
- Systematic Raman Scattering Study on Substitutional Effects in Solid Solution Systems of Ln_Ba_Cu_3O_y (Ln=Eu, Sm and La)
- Raman Scattering Study of the Effect of Nd Substitution into Ba Sites on the Phonon Spectrum of Nd_Ba_Cu_3O_y (x=0-0.4, y=〜7)
- In-Situ Raman Scattering Measurements of the Structural Phase Transition at Temperatures in High T_c-Oxide YBa_2Cu_3O_x : Electrical Properties of Condensed Matter
- High Field Properties of Superconducting Y_xBa_Cu-Oxides
- Influence of Type-I to Type-II Transition by an Applied Electric Field on Photoluminescence and Carrier Transport in GaAs/AlAs Type-I Short-Period Superlattices
- Vanishing of Negative Differential Resistance Region due to Electric Field Screening in Wannier-Stark Localization Type Self-Electro-Optic Effect Devices
- Valence Band Modulation in InGaAs/InAlAs Superlattices with Tensilely Strained Wells Grown on InGaAs Quasi-Substrate on GaAs
- Hydrogen-Absorption Effect on YBa_2Cu_3O_x