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Institute Of Electro-optical Science And Engineering And Advanced Optoelectronic Technology Center N | 論文
- Fabrication of InGaN/GaN Multiple Quantum Wells Nanopillars by Focused Ion Beam Milling
- Ga-Doped ZnO/GaN Schottky Barrier UV Band-Pass Photodetector with a Low-Temperature-Grown GaN Cap Layer
- Electrical-Optical Analysis of a GaN/Sapphire LED Chip by Considering the Resistivity of the Current-Spreading Layer
- Modulation Effects of Periodic Potentials on the Electronic Properties of Bilayer Bernal Graphene: Tight-Binding Model