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Hyundai Electronics Industries Co. Ltd. Kyoungki‐do Kor | 論文
- Highly Reliable Dual Gate Oxide Fabrication by Reducing Wet Etching Time and Re-Oxidation for Sub-Quarter Micron CMOS Devices
- Effect of Wet Etched Thickness and Reoxidation on Reliability of Dual Gate Oxide for Sub-Quarter Micron Complementary Metal-Oxide-Semiconductor Devices
- Degradation of Ta_2O_5 Gate Dielectric by TiCl_4-Based Chemically Vapor Deposited TiN Film in W/TiN/Ta_2O_5/Si System
- Degradation of Ta_2O_5 Gate Dielectric by TiCl_4-Based Chemically Vapor Deposited TiN Film in W/TiN/Ta_2O_5/Si System