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HSRC, Hiroshima Univ. | 論文
- 21pGP-5 Substrate effect on the edge states of epitaxial graphenen grown on 4H-SiC(0001) studied by STM/STS
- 20pZA-7 TM-Pt合金(TM=Cr,Fe)の価電子帯共鳴光電子分光(光電子分光・逆光電子分光・軟X線発光・理論,領域5,光物性)
- 25aYG-7 Edge states of epitaxially grown graphene on 4H-SiC(0001) studied by scanning tunneling microscopy and spectroscopy (STM/STS)
- 20pGH-4 低エネルギー放射光角度分解光電子分光によるBaFe_2As_2のフェルミ面の3次元構造の研究(20pGH FeAs系超伝導(分光),領域8(強相関系:高温超伝導,強相関f電子系など))
- 24aPS-40 Bi/Si(001)のスピン分解角度分解光電子分光(24aPS 領域9ポスターセッション,領域9(表面・界面,結晶成長))
- 25aWX-5 Si(557)-Auにおける一次元金属表面状態のスピン分解光電子分光(25aWX 表面界面電子物性,領域9(表面・界面,結晶成長))
- 25aWX-10 トポロジカル絶縁体Bi_2Se_3における表面・バルク電子散乱(25aWX 表面界面電子物性,領域9(表面・界面,結晶成長))
- 25aWX-6 三次元トポロジカル絶縁体Bi_2Se_3の異方的なフェルミ面(25aWX 表面界面電子物性,領域9(表面・界面,結晶成長))
- 24pRE-8 Bi(111)のバルク状態におけるラシュバ型スピン偏極の観測(24pRE 光電子分光(表面・薄膜・低次元系),領域5(光物性))
- 25aWX-1 Interference of Dirac electrons on the surface of Bi_2Se_3 studied by scanning tunneling microscopy
- 25aPS-62 Electronic structures of ferromagnetic shape memory alloy Ni_2Mn_Sn_ studied by hard-x-ray photoelectron spectroscopy
- 25pPSA-50 Electronic structures of Ni_2Mn_Sn_ upon the martensitic phase transition studied by X-ray magnetic circular dichroism (XMCD)
- 25aRA-4 Electronic and magnetic structures of Heusler-type alloys Ru_Fe_xCrGe
- 25aRA-3 Electronic structures of Ni_2MnGa upon the martensitic phase transition studied by X-ray magnetic circular dichroism (XMCD)
- 27pTH-8 The electronic structures correlated with the martensitic transition in Ni_2Mn_Sn_
- 22pPSB-19 Nucleation of Si atoms on Si(111) surface
- 22pPSB-1 Graphene epitaxially grown on the step with unit-cell height of 4H-SiC(0001) substrate
- 20pQG-10 Electronic structures of Ni_Co_xMnGa studied by x-ray photoemission spectroscopy
- 25pWK-1 Electronic structures of half-heusler alloys XPtSn (X=Ti, Zr, Hf) studied by X-ray photoemission spectroscopy
- 25pWK-2 Electronic Structures of Heusler-Type Alloys Ru_Fe_xCrZ (Z=Ge,Sn) : Studied by Soft X-ray Photoelectron Spectroscopy
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