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Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba 305-8501, Japan | 論文
- Carbon-Nanotube Field-Effect Transistors with Very High Intrinsic Transconductance
- The Effect of Oxygen Partial Pressure on Marangoni-Flow-Induced Dopant Striations in Floating-Zone Silicon Crystals
- Tunneling Magnetoresistance above Room Temperature in La0.7Sr0.3MnO3/SrTiO3/La0.7Sr0.3MnO3 Junctions