スポンサーリンク
Fairchild Semiconductor | 論文
- High-Resolution Spectroscopy of Rubidium Atoms
- A New Insulated Gate Bipolar Transistor Structure employing an Embedded Over-current Protection Device
- A New 1200V PT-IGBT with Protection Circuit employing the Lateral IGBT and Floating p-well Voltage Sensing Scheme
- Experimental study on Improving Unclamped Inductive Switching Characteristics of the New Power MOSFET Employing Deep Body Contact
- Experimental Study on Improving Unclamped Inductive Switching Characteristics of the New Power Metal Oxide Semiconductor Field Effect Transistor Employing Deep Body Contact (Special Issue: Solid State Devices & Materials)
- A New 1200 V Punch Through-Insulated Gate Bipolar Transistor with Protection Circuit Employing Lateral Insulated Gate Bipolar Transistor and Floating p-Well Voltage Sensing Scheme