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Electronics, High-Technology Research Center and Faculty of Engineering, Kansai University | 論文
- Quantum mechanical effect in temperature dependence of threshold voltage of extremely thin SOI MOSFETs
- Quantization Effect in Temperature Dependence of Threshold Voltage of Extremely-Thin SOI MOSFETs
- Proposal of a Partial-Ground-Plane (PGP) Silicon-on-Insulator (SOI) MOSFET for Deep sub-0.1-μm Channel Regime
- Proposal of a Partial-Ground-Plane(PGP) Silicon-on-Insulator(SOI) MOSFET for Deep Sub-100-nm Channel Regime