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Electron Device Division, Sumitomo Electric Industries, Ltd. | 論文
- Thermal Expansion and Atomic Structure of Amorphous Silicon Nitride Thin Films
- Effect of Silicon Nitride Cap on the Activation of Implanted Silicon in Gallium Arsenide
- The Effect of Oxygen Plasma on Activation Efficiency of Implanted Silicon in Gallium Arsenide
- Improvement of the Furnace Annealing Process to Suppress Slip Generation in Gallium Arsenide