スポンサーリンク
Department of Physics and Electronics, Faculty of Engineering, Osaka Prefecture University | 論文
- Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction : II. Strain in GaAsP Layer
- Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction : I. Mosaic Structure
- Imaging of Ultrasonic Velocity Change Corresponding to Optical Absorption Distribution
- Photoconductivity Decay Characteristics of Undoped p-Type CuGaS_2
- A New Method for Measuring Optical Activity in Crystals and Its Application to Quartz
- Optical Band-Pass Filter Using Accidental Isotropy and Optical Activity of AgGaSe_2
- Piezoelectric Coefficients of AgGaSe_2
- Linear Electro-Optic Effect of AgGaSe_2
- Natural Optical Activity of AgGaSe_2. : CHALCOPYRITES : ELECTRICAL AND OPTICAL PROPERTIES
- Application of Modulated Phase-Shift-Difference Method with Rotating Quarter-Wave Plate to CuGaS_2
- Near-Infrared Tomography by Detection of Ultrasonic Pulse Shift for Tissue Diagnosis
- Temperature Dependence of Tetragonal Distortion and Crystal Field Splitting in CuGaS_2
- Photoluminescence Properties of CuGaSe_2 Grown by Iodine Vapour Transport
- A Measurement of Polarization Characteristics of Anisotropic Emission Source
- Excitonic Structure of CuGaS_Se_ and CuAlS_Se_
- Optical Band-Pass Filter Using Accidental Isotropy and Optical Activity of AgGaSe_2 (II)
- Practical Use of Easy Raman Spectrometer Equipped with AgGaSe_2 Filter and GaAlAs Laser Diode
- Current Status of Infrared Technology
- A criterion for Applying Chalcopyrite Semiconductors to Optical Line Elimination Filters
- High Spin Polarization of Conduction Band Electrons in GaAs-GaAsP Strained Layer Superlattice Fabricated as a Spin-Polarized Electron Source