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Department of Materials Science and Technology, Hirosaki University | 論文
- Infrared Lattice Absorption in Wurtzite GaN
- InGaN-Based Single-Chip Multicolor Light-Emitting Diodes
- Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films
- Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450nm
- Matrix Elements of Crystal Electric Fields in Rare Earth Compounds
- InGaN-Based Single-Chip Multicolor Light-Emitting Diodes