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Department of Electrical Engineering, Faculty of Engineering, Doshisha University | 論文
- Silicorn Dioxide Thin Films Prepared from Silicon Tetraacetate Using ArF Excimer Laser by Chemical Vapor Deposition
- Electrical Characterization of Silicon Dioxide Thin Film Prepared by ArF Excimer Laser Chemical Vapor Deposition frorn Silicon Tetraacetate
- Optimum Conditions for NO Reduction Using Intermittent Dielectric Barrier Discharge at Atmospheric Pressure
- Physical Principles and Theoretical Concepts of Transient Acoustic Field
- Structure and tribological properties of Ti-Al-N films prepared by plasma-based ion implantation mixing
- Deposition of Tungsten Carbide Thin Films by Simultaneous RF Sputtering
- Ar/O_2 gas pressure dependence of atomic components of zirconia prepared by intermittent zirconium arc PBII&D
- NO_x Removal Using Ammonia Radicals Prepared by Intermittent Dielectric Barrier Discharge at Atmospheric Pressure
- Influence of a Measuring System to a Transient Voltage on a Vertical Conductor
- Surface Modification of Poly (tetrafluoroethylene) Film Using Dielectric Barrier Discharge of Intermittent Pulse Voltage
- ON FIBERING CERTAIN 3-MANIFOLDS OVER THE CIRCLE