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Department of Applied Physics and Physico-Informatics and CREST-JST, Keio University | 論文
- Effect of Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_2
- The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO_2
- Raman Spectroscopic Stress Evaluation of Femtosecond-Laser-Modified Region Inside 4H-SiC