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Department Of Systems Innovation Graduate School Of Engineering Science Osaka University | 論文
- Parallel Composition Based Adaptive Notch Filter : Performance and Analysis(Digital Signal Processing)
- Characteristics of the Time-Resolved Photoluminescence in Microcrystalline Si
- Lifetime and diffusion coefficient of carriers in X-ray irradiated a-Si:H
- Miniaturized Vision System for Microfluidic Devices
- Hydrogenated Amorphous Silicon/Crystalline Silicon Double Heterojunction X-Ray Sensor
- Spot-size Converter Integrated Laser Diodes (SS-LDs) (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
- Carrier Transport in Polycrystalline Silicon Thin Film Solar Cells Grown on a Highly Textured Structure
- Solid Phase Crystallization in Initial Growth Region of Polycrystalline Silicon Layer During Deposition at 180℃ by Plasma Chemical Vapor Deposition
- Carrier Transport in Polycrystalline Silicon Photovoltaic Layer on Highly Textured Substrate
- Relationship between Surface Roughness and Barrier Uniformity
- Robust and Real-time Estimation of Camera Rotation with Translation-invariant Features
- X-Ray Photoelectron Spectroscopy of Si-As-Te Chalcogenide Glasses Prepared in the Earth's Gravity and in Microgravity
- Valence Band Structure of Si-As-Te Chalcogenide Glasses Prepared in the Gravity Environment of the Earth and in a Microgravity Environment in Space
- Pressure Effects on Electrical and Optical Properties of Si-As-Te Chalcogenide Glasses Fabricated in the Gravity Environment and in a Microgravity Environment
- Fabrication of Si-As-Te Amorphous Semiconductor in a Microgravity Environment
- Real-Time Estimation of Fast Egomotion with Feature Classification Using Compound Omnidirectional Vision Sensor
- Correlation between Microstructure and Photovoltaic Performance of Polycrystalline Silicon Thin Film Solar Cells(Semiconductors)
- Development of Full-Color Display Combined with Ultraviolet-Electroluminescence/Photoluminescence Multilayered Thin Films
- Temperature Dependence of Hot-Electron-Induced Electroluminescence from Hydrogenated Amorphous Silicon
- Electroluminescence and Avalanche Multiplication at Electric Field Strength Exceeding 1 MV/cm in Hydrogenated Amorphous SiC Alloy