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Department Of Materials Science And Engineering Kyoto University | 論文
- Reversible Potential Change of Ferrocenylthiol Monolayers Induced by Atomic Force Microscopy
- Electronic Band Structures and Bond Orders of M_TiS_2(M=Mn,Fe,Co,Ni)
- 鉄道用レール鋼の疲労き裂先端近傍に形成された塑性域の結晶方位解析
- Theoretical Solution Energy of Alkaline Earth Ions in Lanthanum Chromites
- Electronic Structure and Chemical Bondings of MgCr_O_4
- 26p-PSB-31 価数揺動系EuNi_2(Si_Ge_x)_2の熱膨張II
- Absolute Rate, Evolving Luminosity Function, and Evolving Jet Opening Angle Distribution for Long Gamma-Ray Bursts(Astrophysics and Relativity)
- Electrochemical Iron-Chromium Alloying of Carbon Steel Surface Using Alternating Pulsed Electrolysis
- 28a-YH-12 BaVS_3の中性子散乱
- X-ray Absorption Near Edge Structures of Silicon Nitride Thin Film by Pulsed Laser Deposition
- First-principles Calculation of L_3 X-ray Absorption Near Edge Structures (XANES) and Electron Energy Loss Near Edge Structures (ELNES) of GaN and InN Polymorphs
- Lymphatic vessel density in pulmonary adenocarcinoma immunohistochemically evaluated with anti-podoplanin or anti-D2-40 antibody is correlated with lymphatic invasion or lymph node metastases
- ナノインデンテーション法による微小領域及び薄膜の機械特性評価技術
- FE-SEM/EBSPを用いた、温間圧延を施した7000系合金の回復挙動の観察
- Local Control and Cosmetic Outcome after Sector Resection with or without Radiation Therapy for Early Breast Cancer
- Shift of Curie Temperature in Gadolinium Films due to Finite-Size Effects
- Hydride Vapor Phase Epitaxy of GaN on NdGaO_3 Substrate and Realization of Freestanding GaN Wafers with 2-inch Scale
- Hydride Vapor Phase Epitaxy of GaN on NdGaO_3 Substrate and Realization of Freestanding GaN Wafers with 2-inch Scale
- 19pZA-8 RMn_2Ge_2化合物の磁気抵抗
- 18pZA-3 μSRで見たBaVS_3の磁気秩序状態