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Department Of Electrical And Electronic Engineering The University Of Tokushima | 論文
- Effect of Growth Temperature on InGaAsP/GaAsP Expitaxial Growth
- Crosshatch Pattern on InGaAsP Layers Grown on GaAs_P_ Substrate by LPE
- Meltback of GaAs_P_ Substrate in LPE Growth of InGaAsP
- LPE Growth of In_ Ga_xAs_P_y on GaAs_P_
- Room Temperature Operation of Visible (λ=658.6 nm) InGaAsP DH Laser Diodes on GaAsP
- Visible InGaP / GaAsP Dual Wavelength Light Emitting Diodes
- New Wavelength-Demultiplexing InGaAsP/InP Photodiodes : III-4: III-V COMPOUND SOLAR CELLS AND DETECTORS
- Measurement of Diffusion Coefficient and Surface Recombination Velocity for p-InGaAsP Grown on InP
- InGaAsP/InP Native Oxide Stripe Lasers
- InGaAsP/InP Double-Heterostructure Photodiodes
- On Coupled Oscillators Networks for Cellular Neural Networks
- Synchronization Phenomena in RC Oscillators Coupled by One Resistor
- Synchronization Phenomena in Oscillators Coupled by One Resistor
- Magnetoresistance of Annealed CoNb/Cu Multilayers with Amorphous CoNb Magnetic Layers
- 23pRE-12 CuCl量子ドット集合系における励起子分子発光の超蛍光的時間特性III(23pRE 微粒子・ナノ結晶,領域5(光物性))
- 23pRE-11 CuCl量子ドット集合系からの励起子分子発光の増幅自然放出(23pRE 微粒子・ナノ結晶,領域5(光物性))
- 23pPSB-16 ポリマー中に分散したペリレン微粒子における発光減衰時間の粒径依存性(領域5ポスターセッション,領域5,光物性)
- Role of Dislocation in InGaN Phase Separation
- Lateral Overgrowth of Thick GaN on Patterned GaN Substrate by Sublimation Technique
- Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN