スポンサーリンク
Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan | 論文
- Effect of Composition in Ternary La–Al–O Films on Flat-Band Voltage for Application to Dual High-$k$ Gate Dielectric Technology
- Performance and Reliability Improvement of HfSiON Field-Effect Transistor with Low Hafnium Concentration Cap Layer Formed by Metal Organic Chemical Vapor Deposition with Diethylsilane
- Substrate Orientation Dependent Suppression of NiSi Induced Junction Leakage by Fluorine and Nitrogen Incorporation