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Corporate Manufacturing Engineering Center, Toshiba Corporation, 33 Shin-isogo-cho, Isogo-ku, Yokohama 235-0017, Japan | 論文
- Multiscale Analysis of Silicon Low-Pressure Chemical Vapor Deposition
- Quantum Chemical Molecular Dynamics Simulation of the Plasma Etching Processes
- A Theoretical Study on the Realistic Low Concentration Doping in Silicon Semiconductors by Accelerated Quantum Chemical Molecular Dynamics Method
- High-Speed Rotating-Disk Chemical Vapor Deposition Process for In-Situ Arsenic-Doped Polycrystalline Silicon Films
- Tight-Binding Quantum Chemical Calculations of Electronic Structures of Indium Tin Oxide
- Photoresist Ashing Process Using Carbon Tetrafluoride Gas Plasma with Ammonia Gas Addition
- Mechanism of Oxidation of Si Surfaces Exposed to O2/Ar Microwave-Excited Plasma
- Negative Ion Transfer Model of Low-Temperature Oxidation of Silicon Surface by High-Density Microwave Plasma