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Centro Nacional De Microelectronica Csic Serrano | 論文
- Low Temperature GaAs/Si Technology : from Si Substrate Preparation to the Epitaxial Growth
- In Situ Reflectance Anysotropy Monitoring of Antiphase Domains Evolution during Growth of GaAs/Si(001)
- Modulation Spectroscopies on a GaAs/InAs/GaAs Single-Monolayer Structure
- Application of Reflectance Difference Spectroscopy (RDS) to Migration-Enhanced Epitaxy (MEE) Growth of GaAs
- Photoluminescence Study of Type I and Type II GaAs/GaP Strained-Layer Superlattices Grown on GaAs Substrates