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Central Research Laboratory, HPK | 論文
- AlN/GaN Near-Infrared Quantum-Cascade Structures with Resonant-Tunneling Injectors Utilizing Polarization Fields : Semiconductors
- Time-Resolved 1.5 μm-Band Photoluminescence of Highly Oriented $\beta$-FeSi2 Films Prepared by Magnetron-Sputtering Deposition