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Advanced Technology Development Center, Sharp Corporation, 1 Asahi, Daimon-cho, Fukuyama, Hiroshima 721-8522, Japan | 論文

• New Three-Dimensional High-Density Stacked-Surrounding Gate Transistor (S-SGT) Flash Memory Architecture Using Self-Aligned Interconnection Fabrication Technology without Photolithography Process for Tera-Bits and Beyond

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