Akasaki Isamu | Faculty of Science and Technology, 21st Century COE Program "Nano-Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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- Faculty of Science and Technology, 21st Century COE Program "Nano-Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japanの論文著者
Faculty of Science and Technology, 21st Century COE Program "Nano-Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan | 論文
- High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
- Control of Threshold Voltage of Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact
- High On/Off Ratio in Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
- Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
- Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact