Kim Viena | Technology Development Team, Semiconductor R&D Center, Memory Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Dong, Kiheung-Gu, Yongin-City, Kyungki-Do 449-711, South Korea

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• 同名の論文著者
• Technology Development Team, Semiconductor R&D Center, Memory Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Dong, Kiheung-Gu, Yongin-City, Kyungki-Do 449-711, South Koreaの論文著者

Technology Development Team, Semiconductor R&D Center, Memory Business, Samsung Electronics Co., Ltd., San #24, Nongseo-Dong, Kiheung-Gu, Yongin-City, Kyungki-Do 449-711, South Korea | 論文

• Data Retention Characteristics of MONOS Devices with High-k Dielectrics and High-work Function Metal-gates for Multi-gigabit Flash Memory
• Data Retention Characteristics of Nitride-Based Charge Trap Memory Devices with High-$k$ Dielectrics and High-Work-Function Metal Gates for Multi-Gigabit Flash Memory

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