Shimizu Isamu | Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan

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• Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japanの論文著者

Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan | 論文

• Role of Seed Crystal Layer in Two-Step-Growth Procedure for Low Temperature Growth of Polycrystalline Silicon Thin Film from SiF4 by a Remote-Type Microwave Plasma Enhanced Chemical Vapor Deposition

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