Jang Nak-Won | ATD Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd., San #24, Nongseo-Li, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea
スポンサーリンク
概要
- Jang Nak-Wonの詳細を見る
- 同名の論文著者
- ATD Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd., San #24, Nongseo-Li, Kiheung-Eup, Yongin-Si, Kyungki-Do, Koreaの論文著者
ATD Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd., San #24, Nongseo-Li, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea | 論文
- Highly Stable Etch Stopper Technology for 0.25 μm 1 Transistor 1 Capacitor (1T1C) 32 Mega-Bit Ferroelectric Random Access Memory (FRAM)
- Highly Stable Etch Stopper Technology for 0.25μm 1 Transistor 1 Capacitor (1T1C) 32 Mega-Bit Ferroelectric Random Access Memory (FRAM)